Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 407-412

  Hong, S Q ^a   Liaw, H M ^a   Linthicum, K ^b   Davis, R F ^b   Fejes, P ^a   Zollner, S ^a   Kottke, M ^a   Wilson, S R ^a  

^a MOTOROLA INC   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PITTING; SEMICONDUCTING FILMS; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES;

ALUMINUM NITRIDE; BUFFER LAYERS; GAS SOURCE MOLECULAR BEAM EPITAXY; HILLOCKS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0033330115     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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