3C-SiC buffer layers converted from Si at a low temperature

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 219-224

  Liaw, H M ^a   Hong, S Q ^a   Fejes, P ^a   Werho, D ^a   Tompkins, H ^a   Zollner, S ^a   Wilson, S R ^a   Linthicum, K J ^b   Davis, R F ^b  

^a MOTOROLA INC   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND STRENGTH (CHEMICAL); DISLOCATIONS (CRYSTALS); ETHYLENE; INTERFACES (MATERIALS); LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; STACKING FAULTS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; VOID CLUSTER PAIRS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033345555     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-219     Document Type: Conference Paper

References (6)

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