Analysis of the broadening of photoluminescence spectra in porous silicon as a function of growth parameters

Thin Solid Films

Volumn 358, Issue 1, 2000, Pages 196-201

  Agarwal, Vivechana ^a   Mehra, R M ^a   Mathur, P C ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; ELECTROLYTES; EMISSION SPECTROSCOPY; FILM GROWTH; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SILICON WAFERS;

CONFINEMENT ENERGY; QUANTUM EFFECTS;

POROUS SILICON;

EID: 0033898708     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00710-5     Document Type: Article

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