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Thin Solid Films

Volumn 315, Issue 1-2, 1998, Pages 281-285

Influence of anodisation time, current density and electrolyte concentration on the photoconductivity spectra of porous silicon

(4) Mehra, R M a Agarwal, Vivechana a Jain, V K b Mathur, P C a

a UNIVERSITY OF DELHI (India)

b SOLID STATE PHYSICS LABORATORY (India)

Author keywords

Photoconductance; Photoluminescence and recombination; Porous silicon

Indexed keywords

ANODIC OXIDATION; CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTROLYTES; ENERGY GAP; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; POROUS SILICON;

RECOMBINATION;

SEMICONDUCTING FILMS;

EID: 0032473191 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00756-6 Document Type: Article

Times cited : (16)

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