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Thin Solid Films

Volumn 304, Issue 1-2, 1997, Pages 358-364

Changes in photoluminescence behaviour and structure of porous silicon related to preparation conditions and laser irradiation

(5) Elhouichet, H a Bessais B a Younes, O Ben b Ezzaouia, H a Oueslati, M b

a Institut National de Recherche Scientifique et Technique Tunis (Tunisia)

b FACULTÉ DES SCIENCES DE TUNIS (Tunisia)

Author keywords

Laser irradiation; Luminescence; Nanostructures; Silicon

Indexed keywords

ELECTRONS; LASER BEAM EFFECTS; MATHEMATICAL MODELS; MOLECULAR STRUCTURE; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POROSITY;

QUANTUM CONFINEMENT;

POROUS SILICON;

EID: 0031189562 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00091-6 Document Type: Article

Times cited : (31)

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