Scanning tunneling microscopy and ion channeling studies of thin Co films on bromine-treated Si(100) surfaces

Applied Surface Science

Volumn 156, Issue 1, 2000, Pages 161-168

  Sekar, K ^a,b   Sundaravel, B ^a   Wilson, I H ^a   Heiland, W ^a  

^a UNIVERSITY OF OSNABRÜCK   (Germany)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BROMINE; COBALT; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACES; THIN FILMS;

ION CHANNELING; SILICIDE;

SEMICONDUCTING SILICON;

EID: 0033897216     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00504-8     Document Type: Article

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