Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum

Applied Surface Science

Volumn 137, Issue 1-3, 1999, Pages 11-19

  Sundaravel, B ^a   Das, Amal K ^a   Ghose, S K ^a   Sekar, K ^a,b   Dev, B N ^a  

^a INSTITUTE OF PHYSICS   (India)

^b UNIVERSITY OF OSNABRÜCK   (Germany)

Author keywords

Epitaxy; Grain coarsening; Mosaic spread; Strain

Indexed keywords

ANNEALING; BROMINE; CRYSTAL LATTICES; DEPOSITION; EPITAXIAL GROWTH; PASSIVATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; SILVER; STRAIN; THIN FILMS; VACUUM APPLICATIONS;

GRAIN COARSENING;

METALLIC FILMS;

EID: 0032786006     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00484-X     Document Type: Article

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