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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 72, Issue 1, 2000, Pages 1-6

Nucleation and growth of low-temperature fine-crystalline silicon: A scanning probe microscopy and Raman spectroscopy study of the influence of hydrogen and different substrates

(4) Ross, Ch a Herion, J a Carius, R a Wagner, H a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; HYDROGEN; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

MICROCRYSTALLINE MATERIALS; SCANNING PROBE MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0033896258 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0379-6779(99)00432-4 Document Type: Article

Times cited : (5)

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