Plasma deposition of amorphous carbon films on copper

Thin Solid Films

Volumn 359, Issue 2, 2000, Pages 275-282

  Chiu, S ^a   Turgeon, S ^a   Terreaul, B ^a   Sarkissian, A ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COPPER; ION IMPLANTATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON IMPLANTATION OUT DIFFUSION (CIOD); PLASMA SOURCE ION IMPLANTATION (PSII);

AMORPHOUS FILMS;

EID: 0033895324     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00748-8     Document Type: Article

References (29)

1. Geis M.W., Angus J.C. Sci. Am. October:1992;84.
2. Narayan J., Godbole V.P., White C.W. Science. 252:1991;416.
3. Hoff H.A., Vestyckb D.J. Jr., Butler L.E., Prins J.F. Appl. Phys. Lett. 62:1993;34.
4. Lee S.T., Chen S., Agostinelli J., Braunstein G., Huang L.J., Lau W.M. Appl. Phys. Lett. 60:1992;2213.
5. Cabioc'h T., Riviere J.P., Delafond J., Jaouen M., Denanot M.F. Thin Solid Films. 263:1995;162.
6. Sarkissian A.H., Bourque-Viens A., Paynter R.W., St-Jacques R.G., Stansfield B.L. Surf. Coat. Technol. 98:1998;1336.
7. Moller W., Fukarek W., Lange K., Keudell A.V., Jacob W. Jpn. J. Appl. Phys. (Part 1). 34:1995;2163.
8. Keudell A.V., Jacob W. J. Appl. Phys. 81:1997;1531.
9. Pecher P., Jacob W. Appl. Phys. Lett. 73:1998;31.
10. Tuinstra F., Koenig J.L. J. Chem. Phys. 53:1970;1126.
11. Lespade P., Al-Jishi R., Dresselhaux M.S. Carbon. 20:1982;427.
12. Cho N.-H., Krishnan K.M., Veirs D.K., Rubin M.D., Hopper C.B., Bhushan B. J. Mater. Res. 5:1990;2543.
13. Bhargava S., Bist H.D., Narlikar A.V., Samanta S.B., Narayan J., Tripathi H.B. J. Appl. Phys. 79:1996;1917.
14. Roth J., Vietzke E., Haasz A.A. Nuclear Fusion Suppl. 1:1991;63.
15. W. Ekstein, C. Garcia-Rosales, J. Roth, W. Ottenberger, MPI für Plasmaphysik Report IPP 9/82 (February 1998, Garching, Germany).
16. Davis J.W. Haasz. Appl. Phys. Lett. 57:1990;1976.
17. Davis J.W., Haasz A.A., Stangeby P.C. J. Nucl. Mater. 155-157:1988;234.
18. Kitabatake M., Wasa K. J. Vac. Sci. Technol. A. 6:1988;1793.
19. Beeman D., Silverman J., Lynds R., Anderson M.R. Phys. Rev. B. 30:1984;870.
20. Kulik J., Lifshitz Y., Lempert G.D., Rabalais J.W., Marton D. J. Appl. Phys. 76:1994;5063.
21. Chen J., Conrad J.R., Dodd R.A. J. Mater. Eng. Perf. 2:1993;839.
22. Sykes D.E. Walls J.M. Methods of Surface Analysis. 1989;220 Cambridge University Press, Cambridge.
23. Tsai H.-C., Bogy D.B. J. Vac. Sci. Technol. A. 5:1987;3287.
24. Lau W.M., Huang L.J., Bello I., Yiu Y.M., Lee S.-T. J. Appl. Phys. 75:1994;3385.
25. Mizokawa Y., Miyasato T., Nakamura S., Geib K.M., Wilmsen C.W. J. Vac. Sci. Technol. A. 5:1987;2809.
26. Schafer J., Ristein J., Graupner R., Ley L., Stephan U., Frauenheim Th., Veerasamy V.S., Amaratunga G.A.J., Weiler M., Ehrhardt H. Phys. Rev. B. 53:1996;7762.
27. Wang L.-C., Halada G., Gambino R.J., Hayes A., DiStefano S. J. Appl. Phys. 79:1996;5576.
28. He X., Li W., Li H., Fan Y. Nucl. Instrum. Methods B. 82:1993;528.
29. Haq S., Tunnicliffe D.L., Sails S., Savage J.A. Appl. Phys. Lett. 68:1996;469.