In situ monitoring of ZnS/GaP and ZnSe/GaAs metalorganic vapor phase epitaxy using reflectance anisotropy spectroscopy and spectroscopic ellipsometry

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 12-15

  Meyne, C ^a   Gensch, M ^a   Peters, S ^b   Pohl, U W ^a   Zettler, J T ^a   Richter, W ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b SENTECH INSTRUMENTS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DESORPTION; ELLIPSOMETRY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PARTIAL PRESSURE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS); SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0033894062     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00896-2     Document Type: Article

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