Integrated packaging of over 100 GHz bandwidth uni-traveling-carrier photodiodes

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 158-160

  Royter, Yakov ^a   Furuta, Tomofumi ^a   Kodama, Satoshi ^a   Sahri, Nabil ^a   Nagatsuma, Tadao ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONICS PACKAGING; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON WAFERS; SOLDERING; SUBSTRATES; WAVEGUIDES;

HIGH SPEED ELECTRONICS; INTEGRATED PACKAGING; SEMICONDUCTOR DEVICE PACKAGING; UNITRAVELING CARRIER PHOTODIODES; WAFER BONDING TECHNIQUES; WET ETCHING;

PHOTODIODES;

EID: 0033893546     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830967     Document Type: Article

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