High-Q Si-based inductor shielded with double-layer polysilicon for RF applications

Microwave and Optical Technology Letters

Volumn 24, Issue 6, 2000, Pages 366-367

  Tan, H P ^a   Ma, J G ^a   Yeo, K S ^a   Do, M A ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTERCONNECTION NETWORKS; MICROPROCESSOR CHIPS; POWER INDUCTORS; Q FACTOR MEASUREMENT; SEMICONDUCTING SILICON;

DOUBLE-LAYER POLYSILICON; INDUCTOR ON-CHIP; QUALITY FACTORS;

INTEGRATED OPTOELECTRONICS;

EID: 0033892822     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(20000320)24:6<366::AID-MOP2>3.0.CO;2-C     Document Type: Article

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