Electron-stimulated bond rearrangements on the H/Si(100)-3×1 surface

Surface Science

Volumn 446, Issue 3, 2000, Pages 211-218

  Shen, T C ^a   Steckel, J A ^b   Jordan, K D ^b  

^a UTAH STATE UNIVERSITY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTATIONAL METHODS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DESORPTION; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; HYDROGEN; MOLECULAR VIBRATIONS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; SURFACE PHENOMENA;

DENSITY FUNCTIONAL THEORY (DFT); ELECTRON STIMULATED DESORPTION (ESD); LOW INDEX SINGLE CRYSTALS; SURFACE RECONSTRUCTION;

SILICON WAFERS;

EID: 0033891544     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01147-4     Document Type: Article

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