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Volumn 411, Issue 1-2, 1998, Pages 203-214
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Atomic scale modifications of hydrogen-terminated silicon 2 × 1 and 3 × 1 (001) surfaces by scanning tunneling microscope
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Author keywords
Hydrogen; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction; Surface thermodynamics
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Indexed keywords
DEPOSITION;
DESORPTION;
HYDROGEN;
HYDROGEN BONDS;
PHASE TRANSITIONS;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SUBSTRATES;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
SURFACE TREATMENT;
THERMODYNAMICS;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
SEMICONDUCTING SILICON;
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EID: 0032138917
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(98)00364-1 Document Type: Article |
Times cited : (31)
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References (18)
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