Low-frequency noise characteristics of self-aligned AlGaAs/GaAs HBT's with a noise corner frequency below 3 kHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1997, Pages 133-136

  Shin, Jin Ho ^a   Kim, Jiyoung ^a   Chung, Yujin ^a   Lee, Joonwoo ^a   Ahn, Kyu Hwan ^a   Kim, Bumman ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE PROPERTIES;

SURFACE RECOMBINATION CURRENTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030678788     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)