Modelisation of extended defects to simulate the transient enhanced diffusion of boron

Materials Science and Engineering: B

Volumn 71, Issue 1-3, 2000, Pages 155-159

  Lampin, E ^a   Senez, V ^a   Claverie, A ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b CEMES CNRS   (France)

Author keywords

Boron TED; Dislocation loops; Growth; Modelisation; Nucleation; Silicon self interstitials

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); MATHEMATICAL MODELS; SEMICONDUCTING BORON;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0033888537     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00366-9     Document Type: Article

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