On the 'asymmetrical' behavior of transient enhanced diffusion in pre-amorphized Si wafers

Materials Research Society Symposium - Proceedings

Volumn 532, Issue , 1998, Pages 67-72

  Alquier, D ^a   Cowern, N E B ^a   Pichler, P ^a   Armand, C ^a   Martinez, A ^a   Mathiot, D ^a   Omri, M ^a   Claverie, A ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BORON; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; PHASE INTERFACES; SECONDARY ION MASS SPECTROMETRY; SUPERSATURATION;

END-OF-RANGE (EOR) DEFECTS; TRANSIENT ENHANCED DIFFUSION (TED);

SILICON WAFERS;

EID: 0031643511     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)