Real-time observation of ellipsometry oscillation during GaAs layer by layer growth by metalorganic vapor-phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 6 A/B, 1999, Pages

  Lee, Jeong Sik ^a,b   Sugou, Shigeo ^a   Masumoto, Yasuaki ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; ELLIPSOMETRY; FILM GROWTH; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

LAYER BY LAYER GROWTH;

SEMICONDUCTING FILMS;

EID: 0032689386     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l614     Document Type: Article

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