Ultralow-threshold cryogenic vertical-cavity surface-emitting laser

IEEE Photonics Technology Letters

Volumn 12, Issue 1, 2000, Pages 1-3

  Zou, Z ^a   Huffaker, D L ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CRYOGENICS; CURRENT DENSITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; LASER RESONATORS; SEMICONDUCTOR GROWTH;

CRYOGENIC VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 0033886415     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.817427     Document Type: Article

References (12)

1. B. Lu, W.-L. Luo, C. Hains, J. Cheng, R. P. Schneider, R. P. Choquette, K. L. Lear, S. P. Kilcoyne, and J. C. Zolper, "High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications." IEEE Photon. Technol. Lett., vol. 7, pp. 447-448, 1995.
2. E. Goobar, M. G. Peters, G. Fish, and L. A. Coldren, "Highly efficient vertical-cavity surface-emitting lasers optimized for low-temperature operation," IEEE Photon. Technol. Lett., vol. 7, pp. 851-853, 1995.
3. G. Goncher, B. Lu, W.-L. Luo, J. Cheng, S. Hersee, S. Z. Sun, R. P. Schneider, and J. C. Zolper, "Cyrogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers at temperatures from 200 K to 6 K," IEEE Photon. Technol. Lett., vol. 8, pp. 316-318, 1996.
4. Y. A. Akulova, B. J. Thibeault, J. Ko, and L. A. Coldren, "Low-temperature optimized vertical-cavity surface-emitting lasers with submilliamp threshold currents over the 77-370 K temperature range," IEEE Photon. Technol. Lett., vol. 9, pp. 277-279, 1997.
5. G. G. Ortiz, C. P. Hains, B. Lu, S. Z. Sun, J. Cheng, and J. C. Zolper, "Cyrogenic VCSEL's with chirped multiple quantum wells for a very wide temperature range of CW operation," IEEE Photon. Technol. Lett., vol. 8, pp. 1423-1425, 1996.
6. A. Yariv, "Scaling laws and minimum threshold currents for quantum confined semiconductor lasers," Appl. Phys. Lett., vol. 53, pp. 1033-1035, 1988.
7. D. L. Huffaker, J. Shin, and D. G. Deppe, "Low threshold half-wave vertical-cavity lasers," Electron. Lett., vol. 30, pp. 1946-1947, 1994.
8. D. L. Huffaker, L. A. Graham, H. Deng, and D. G. Deppe, "Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors," IEEE Photon. Technol. Lett., vol. 8, pp. 974-976, 1996.
9. 1-xAs-AIAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., vol. 57, pp. 2844-2846, 1990.
10. D. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, "Native-oxide defined buried ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, pp. 97-99, 1994.
11. Y. A. Akulova, J. Ko, and L. A. Coldren, "Substrate-emitting short-wavelength vertical-cavity lasers for cryogenic optical interconnects," in Tech. Dig., Conf. Lasers and Electro-Optics, vol. 6, 1998, pp. 371-372.
12. H. Deng, C. C. Lin, D. L. Huffaker, Q. Deng, D. G. Deppe, and T. J. Roger, "Temperature dependence of the transverse lasing mode in vertical-cavity lasers," J. Appl. Phys., vol. 77, pp. 2279-2286, 1995.