Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers at temperatures from 200 K to 6 K

IEEE Photonics Technology Letters

Volumn 8, Issue 3, 1996, Pages 316-318

  Goncher, G ^a   Lu, Bo ^b,c   Luo, Wen Lin ^c   Cheng, Julian ^c   Hersee, S ^c   Sun, S Z ^c   Schneider, R P ^d   Zolper, J C ^d  

^a TEKTRONIX INC   (United States)

^b SDL INC   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CONTINUOUS WAVE LASERS; CRYOGENICS; ELECTRIC CURRENTS; LIGHT MODULATION; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

DC LASING OPERATION; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030104206     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481102     Document Type: Article

References (13)

1. J. Katz, "Low-temperature characteristics of semiconductor injection lasers," in Low Temperature Electronics, R. K. Kirschman, Ed. Piscataway, NJ: IEEE, 1986, pp. 465-70.
2. B. Lu, W.-L. Luo, C. Hains, J. Cheng, R. P. Schneider, K. D. Choquette, K. L. Lear, S. P. Kilcoyne, and J. C. Zolper, "High-efficiency, and high-power vertical-cavity surface-emitting lasers designed for cryogenic applications," IEEE Photon. Technol. Lett., vol. 7, pp. 447-448, 1995.
3. E. Goobar, C. Mahon, F. H. Peters, M. G. Peters, and L. A. Coldren, "Low-temperature operation of vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 7-9, 1995.
4. E. Goobar, C. Mahon, F. H. Peters, M. G. Peters, and L. A. Coldren, "Highly efficient vertical-cavity surface-emitting lasers optimized for low-temperature operation," IEEE Photon. Technol. Lett., vol. 7, pp. 851-853, 1995.
5. B. Zhao, T. R. Chen, L. E. Eng, Y. H. Zhuang, A. Shakoui, and A. Yariv, "Sub-100 μA current operation of strained InGaAs quantum well lasers at low temperatures," Appl. Phys. Lett., vol. 65, pp. 1805-1807, 1994.
6. B. Tell, K. F. Brown-Goebeler, R. E. Ieibenguth, F. M. Baez and Y. H. Lee, "Temperature dependence of GaAs-AlGaAs vertical-cavity surface-emitting lasers," Appl. Phys. Lett., vol. 8, pp. 683-685, 1992.
7. B. Lu, P. Zhou, J. Cheng, K. J. Malloy, and J. C. Zolper, "High temperature pulsed and CW operation and thermally stable threshold characteristics of vertical-cavity surface-emitting lasers grown by metal-organic chemical vapor deposition," Appl. Phys. Lett., vol. 65, pp. 1337-1339, 1994.
8. R. A. Morgan, M. K. Hibbs-Brenner, T. M. Marta, R. A. Walterson, S. Bounnak, E. L. Kalweit, and J. A. Lehman, "200 °C, 96-nm wavelength range, continuously-wave lasing from unbonded GaAs MOVPE-grown vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 441-443, 1995.
9. P. Zhou, B. Lu, J. Cheng, K. J. Malloy, S. Z. Sun, S. D. Hersee, and J. C. Zolper, "Vertical-cavity surface-emiting lasers with thermally stable electrical characteristics," J. Appl. Phys., vol. 77, pp. 2264-2267, 1995.
10. R. A. Morgan, "Progress in planarized vertical cavity surface emitting laser devices and arrrays," SPIE Proc. 1992, 1991, pp. 149-159.
11. M. D. Sturge, "Optical absorption of gallium arsenide between 0.6 eV and 2.75 eV," Phys. Rev., vol. 127, pp. 768-773, 1962.
12. E. F. Schubert, L. W. Tu, G. J. Zydik, R. F. Kopf, A. Benvenuti, and M. R. Pinto, "Elimination of heterojunction band discontinuities by modulation doping," Appl. Phys. Lett., vol. 60, pp. 466-468, 1992.
13. R. Yu, R. Nagarajan, T. R. A. Holmes, J. E. Bowers, S. P. DenBaars, and C.-E. Zah, "Ultrahigh speed performance of a quantum well laser at cryogenic temperatures," Appl. Phys. Lett., vol. 65, pp. 528-530, 1994.