Low-temperature optimized vertical-cavity lasers with submilliamp threshold currents over the 77-370 K temperature range

IEEE Photonics Technology Letters

Volumn 9, Issue 3, 1997, Pages 277-279

  Akulova, Y A ^b   Thibeault, B J ^b   Ko, J ^b   Coldren, L A ^a,b  

^a IEEE

^b University of California   (United States)

Author keywords

Cryogenic electronics; III V semiconductors; Laser cavity resonators; Quantum well lasers; Surface emitting lasers

Indexed keywords

ELECTRIC CURRENTS; LASER RESONATORS; LOW TEMPERATURE PROPERTIES; MIRRORS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; QUANTUM WELL LASERS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

CRYOGENIC ELECTRONICS; CRYOGENIC OPTICAL INTERCONNECT; DISTRIBUTED BRAGG REFLECTORS; LASER CAVITY RESONATORS; OPTICAL SCATTERING LOSS; SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 0031102979     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.556045     Document Type: Article

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