Annealing study of erbium and oxygen implanted gallium nitride

Materials Research Society Symposium - Proceedings

Volumn 422, Issue , 1996, Pages 199-204

  Torvik, J T ^a   Feuerstein, R J ^a   Qiu, Ch H ^a   Leksono, M W ^a   Pankove, J I ^a   Namavar, F ^a  

^a UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMMONIA; ANNEALING; NITRIDES; OXYGEN; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ERBIUM IMPLANTED GALLIUM NITRIDE; ERBIUM OXYGEN CO-IMPLANTATION; ERBIUM RELATED PHOTOLUMINESCENCE;

ERBIUM;

EID: 0030409737     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-422-199     Document Type: Conference Paper

References (18)