Ultrafast electron drift velocity overshoot in 3C-SiC

Solid State Communications

Volumn 113, Issue 9, 2000, Pages 539-542

  Caetano, E W S ^a   Bezerra, E F ^a   Freire, V N ^a   Da Costa, J A P ^b   Da Silva Jr , E F ^c  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^c FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; SILICON CARBIDE; ULTRAFAST PHENOMENA;

ULTRAFAST ELECTRON DRIFT VELOCITY OVERSHOOT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033881103     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00522-0     Document Type: Article

References (24)

1. Lambrecht W.R.L., Segall B. Phys. Rev. B. 52:1995;R2249.
2. Wenzien B., Käckell P., Bechstedt F. Phys. Rev. B. 52:1995;10897.
3. Park C.H., Cheong B.-H., Lee K.-H., Chang K.J. Phys. Rev. B. 49:1994;4485.
4. Käckell P., Wenzien B., Bechstedt F. Phys. Rev. B. 50:1995;10761. and references therein.
5. Hoh A., Akita H., Kimoto T., Matsunami H. Appl. Phys. Lett. 65:1994;1400.
6. Fissel A., Schroter B., Richter W. Appl. Phys. Lett. 66:1995;3182.
7. Hobgood H.M., Barrett D.L., McHuch J.P., Clarke R.C., Sriram S., Burk A.B., Greggi J., Brandt C.D., Hopkins R.H., Choyke W.J. J. Cryst. Growth. 137:1994;181.
8. Nishino S., Powell J.A., Will H.A. Appl. Phys. Lett. 42:1983;460.
9. Ferry D.K. Phys. Rev. B. 12:1975;2361.
10. Weng X.M., Cui H.L. Phys. Stat. Sol. (b). 201:1997;161.
11. Nilsson H.-E., Sannemo U., Patersson C.S. J. Appl. Phys. 80:1996;3365.
12. Joshi R.P. J. Appl. Phys. 78:1995;5518.
13. Tsukioka K., Vasileska D., Ferry D.K. Physica B. 185:1993;466.
14. Shur M. Electron. Lett. 12:1976;615.
15. Roland P.A., Constant E., Salmer G., Fauquembergue R. Electron. Lett. 15:1979;373.
16. Carnez B., Cappy A., Kaszynski A., Constant E., Salmer G. J. Appl. Phys. 51:1980;784.
17. Nougier J.P., Vaissiere J.C., Gasquet D., Zimmermann J., Constant E. J. Appl. Phys. 52:1981;825.
18. Alencar A.M., Nobre F.A.S., Sampaio A.J.C., Freire V.N., da Costa J.A.P. Appl. Phys. Lett. 42:1991;558.
19. Caetano E.W.S., Mendes E.A., Freire V.N., da Costa J.A.P., Lei X.L. Phys. Rev. B. 57:1998;11872.
20. Foutz B.E., O'Leary S.K., Shur M.S., Eastman L.F. J. Appl. Phys. 85:1999;7727.
21. Freire V.N., Vasconcellos A.R., Luzzi R. Phys. Rev. B. 39:1989;13264. and references therein.
22. Caetano E.W.S., Costa Filho R.N., Freire V.N., da Costa J.A.P. Solid State Commun. 110:1999;469.
23. Tiwari S. Compound Semiconductor Device Physics. 1992;Academic Press, San Diego, CA.
24. Yu P.Y., Cardona M. Fundamentals of Semiconductors. 1996;Springer, Berlin.