High Temperature Hot Electron Transport in 6H- and 3C-SiC

Physica Status Solidi (B) Basic Research

Volumn 201, Issue 1, 1997, Pages 161-166

  Weng, X M ^a   Cui, H L ^a  

^a Stevens Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031476990     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(199705)201:1<161::AID-PSSB161>3.0.CO;2-C     Document Type: Article

References (13)

1. H. MORKOC, S. STRITE, B. G. GAO, M. E. LIN, B. SVERDLOV, and M. BURNS, J. Appl. Phys. 76, 1363 (1994).
2. R. J. BETSCH, P. G. MCMULLIN, C. D. BRANDT, D. L. BARRETT, R. G. SEIDENSTECKER, R. H. HOPKINS, and A. MORSE, in: Proc. Internat. Symp. Semiconductor Device Research, 1991 (p. 505).
3. J. R. ZHOU, D. VASILESKA, and D. K. FERRY, Solid State Electronics 36, 1289 (1993).
4. H. S. BERMAN, T. M. HENG, H. C. NATHENSON, and R. B. CAMPBELL, Silicon Carbide, Ed. R. C. MARSHALL, J. W. FAUST, JR., and C. E. RYAN, University of South Carolina Press, Columbia, S.C., 1974 (p. 500).
5. W. V. MUENCH and E. PETTENPAUL, J. Appl. Phys. 48, 4823 (1977).
6. X. L. LEI, phys. stat. sol. (b) 170, 519 (1992).
7. X. M. WENG and X. L. LEI, J. Phys.: Condensed Matter 6, 6287 (1994).
8. A. K. GHORAI and D. P. BHATTACHARYA, phys. stat. sol. (b), 163, 247 (1991).
9. E. O. KANE, J. Phys. Chom. Solids 1, 249 (1957).
10. E. SCHÖLL and W. QUADE, J. Phys. C 20, L861 (1987).
11. K. TSUKIOKA, D. VASILESKA, and D. K. FERRY, Physica 185B, 466 (1993).
12. H. S. NILSSON, U. SANNEMO, and C. S. PETERSSON, J. Appl. Phys. 80, 3365 (1996).
13. W. R. L. LAMBRECHT, B. SEGALL, M. YOGANATHAN, W. SUTTROP, R. P. DEVATY, W. J. CHOYKE, J. A. EDMOND, J. A. POWELL, and M. ALOUANI, Phys. Rev. B 5, 10722 (1995).