Residual strain in annealed GaAs single-crystal wafers as determined by scanning infrared polariscopy, X-ray diffraction and topography

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 172-176

  Herms, M ^a   Fukuzawa, M ^b   Melov, V G ^a   Schreiber, J ^b   Mock P ^c   Yamada, M ^b  

^a FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; POLARISCOPES; RESIDUAL STRESSES; SINGLE CRYSTALS; STRAIN; SURFACE TENSION; X RAY CRYSTALLOGRAPHY;

RESIDUAL STRAIN; SCANNING INFRARED POLARISCOPY; SINGLE CRYSTAL X RAY TRANSMISSION TOPOGRAPHY (SXRTT);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033878962     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00673-9     Document Type: Article

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