Process-induced stress and microcrack nucleation in GaAs wafers

Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 821-825

  Ward III, Allan ^a   Hendricks, Robert W ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Fabrication yield; Fracture; GaAs; Residual stress; Wafer breakage

Indexed keywords

EID: 0342523427     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0102-7     Document Type: Article

References (8)

1. A. Ward and R. W. Hendricks, Advances in X-ray Analysis, 39, 1995, p. 289.
2. K.J. Ely, Ph.D. Dissertation, Virginia Polytechnic Institute and State University, Blacksburg, VA, June 1993.
3. B.E. Warren, X-ray Diffraction, (New York: Dover Publications, 1990), p. 315.
4. A. Ward, Ph.D. Dissertation, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061, June 1996. (This document can be viewed on the Internet at http:// scholar.lib.vt.edu/theses/public/etd-394172159651721/etd-title.html.)
5. P.B. Hirsch, Dislocations and Properties of Real Materials, (London: The Institute of Metals, 1985), p. 333.
6. S.B. Batdorf, Fracture Mechanics of Ceramics, 3rd Ed., ed. D. Hasselman, (New York: Pergamon Press, 1978).
7. C.J. Morrissey, NASA Tech Brief, v. 11, No. 1, Item 13, Jet Propulsion Laboratory, CIT, Pasadena, CA, February, 1987.
8. W. Weibull, J. Appl. Mech. 18, 293 (1951).