EPR study of He-implanted Si

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 60-63

  Pivac, B ^a   Rakvin, B ^a   Tonini, R ^b   Corni, F ^b   Ottaviani, G ^b  

^a RUDER BO KOVI INSTITUTE   (Croatia)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BUBBLE FORMATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON SPIN RESONANCE SPECTROSCOPY; HELIUM; ION IMPLANTATION; SINGLE CRYSTALS;

DANGLING BOND LINESHAPE; STRAIN FIELD;

SILICON WAFERS;

EID: 0033877915     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00434-1     Document Type: Article

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