In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Thin Solid Films

Volumn 364, Issue 1, 2000, Pages 22-27

  Ebert, M ^a   Bell, K A ^a   Yoo, S D ^a   Flock, K ^a   Aspnes, D E ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELLIPSOMETRY; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; NONDESTRUCTIVE EXAMINATION; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

PHOTODIODE ARRAYS (PDA); REFLECTANCE-ANISOTROPY SPECTROSCOPY (RAS); REFLECTANCE-DIFFERENCE SPECTROSCOPY (RDS); SPECTROSCOPIC ELLIPSOMETRY (SE);

SEMICONDUCTOR GROWTH;

EID: 0033872591     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00920-7     Document Type: Article

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