Thermally evaporated ITO/GaAs Schottky barrier contacts

Electronics Letters

Volumn 34, Issue 1, 1998, Pages 129-131

  Salehi, A ^a   Toosi, K N ^a  

^a Faculty of Materials and Manufacturing Technology   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONTACTS; EVAPORATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS;

INDIUM TIN OXIDES (ITO); THERMAL EVAPORATION;

SCHOTTKY BARRIER DIODES;

EID: 0032495309     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980024     Document Type: Article

References (7)

1. MORGAN, D.V., ALIYU, Y.H., and BUNCE, R.W.: 'The thermal stability of indium-tin-oxide/n-GaAs schottky contacts', Phys. Solid State, 1992, 133, (a), pp. 77-93
2. LI, X., WANLESS, M.W., GESSERT, T.A., EMERY, K.A., and COUTTS, T.J.: 'High-efficiency indium tin oxide/indium phosphide solar cells', Appl. Phys. Lett., 1989, 54, (26), pp. 2674-2676
3. 0.75As heterojunction bipolar transistors with transparent indium-tinoxide emitter contacts', Electron. Lett., 1993, 29, pp. 2223-2225
4. MORGAN, D.V., SALEHI, A., ALIYU, Y.H., BUNCE, R.W., and DISKETT, D.: 'Radiation damage in indium tin oxide (ITO) layers', Thin Solid Films, 1995, 258, pp. 283-285
5. BALASUBRAMANIAN, N., and SUBRAHAMANYAM, A.: 'Schottky diode properties and the photovoltaic behaviour of indium tin oxide (ITO)/n-GaAs junctions- effect of arsenic deficient GaAs surface', Semicond. Sci. Technol., 1990, 5, pp. 871-876
6. SALEHI, A.: 'Radiation damage and thermal treatment of indium tin oxide (ITO) films and rectifying contacts'. Ph.D. Thesis, University College Cardiff, UK, 1995, (All papers to be published)
7. SAXENA, A.N.: 'Forward current-voltage characteristics of Schottky barriers on n-type silicon', Surface Sci., 1969, 12, pp. 151-171