Phenomenology of a dual-mode microwave/RF discharge used for the deposition of silicon oxide thin layers

Plasma Sources Science and Technology

Volumn 6, Issue 3, 1997, Pages 323-333

  Etemadi, R ^a,b   Godet, C ^a   Perrin, J ^a,c  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c Balzers Process Systems   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DISSOCIATION; HELIUM; OXYGEN; PLASMA APPLICATIONS; PLASMA DENSITY; PLASMA FLOW; PLASMA STABILITY; SILICA; THIN FILMS;

DUAL MODE MICROWAVE/RF DISCHARGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

PLASMA SOURCES;

EID: 0031207793     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/6/3/009     Document Type: Article

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