Effect of Chemicals and Slurry Particles on Chemical Mechamical Polishing of Polyimide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 3 A, 2000, Pages 1085-1090

  Kim, Hyoung Gyun ^a   An, Yoo Min ^a   Moon, Doo Kyung ^b   Park, Jin Goo ^a  

^a Hanyang University   (South Korea)

^b Hanwha Corporation   (South Korea)

Author keywords

Alumina particles; Ceria particles; CMP; Low K materials; Polymide; Removal rate; Silica particles; Slurry; Surface roughness

Indexed keywords

ALUMINA; AMMONIUM COMPOUNDS; CERIUM COMPOUNDS; CHEMICAL POLISHING; CHEMICALS; PARTICLE SIZE ANALYSIS; PH EFFECTS; POTASSIUM COMPOUNDS; SILICA; SLURRIES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

CERIA; CHEMICAL MECHANICAL POLISHING; POTASSIUM HYDROXIDE; TETRAMETHYL AMMONIUM HYDROXIDE;

POLYIMIDES;

EID: 0033749449     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.1085     Document Type: Article

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