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Volumn , Issue , 1997, Pages 360-363
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Effects of processing temperatures on device design rules for Silicon/Silicon Germanium heterojunction bipolar transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
DESIGN;
GERMANIUM;
HETEROJUNCTIONS;
PROCESSING;
SILICON;
SILICON WAFERS;
ANNEAL TEMPERATURES;
DC CHARACTERISTICS;
ELECTRICAL CHARACTERIZATION;
EPITAXIAL REACTORS;
PROCESSING TEMPERATURE;
SILICON COLLECTORS;
SIMULTANEOUS GROWTH;
SINGLE-CRYSTAL SI;
HETEROJUNCTION BIPOLAR TRANSISTORS;
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EID: 0343278059
PISSN: 19308876
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/ESSDERC.1997.194440 Document Type: Conference Paper |
Times cited : (3)
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References (2)
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