Impact of extrinsic base process on NPN HBT performance and polysilicon resistor in integrated SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1997, Pages 187-190

  Jeng, S J ^a   Ahlgren, D C ^a   Berg, O D ^a   Ebersman, B ^a   Freeman, G ^a   Greenberg, D R ^a   Malinowski, J ^a   Nguyen Ngoc, D ^a   Schonenberg, K T ^a   Stein, K J ^a   Colavito, D ^a   Longstreet, M ^a   Ronsheim, P ^a   Subbanna, S ^a   Harame, D L ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES;

POLYSILICON RESISTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031379773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)