Preparation of nanocrystalline silicon quantum dots by pulsed plasma processes with high deposition rates

Materials Research Society Symposium - Proceedings

Volumn 571, Issue , 1999, Pages 43-48

  Nishiguchi, K ^a   Hara, S ^a   Amano, T ^a   Hatatani, S ^a   Oda, S ^a  

^a Tokyo Institute of Technology ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COALESCENCE; DISPERSIONS; ELECTRODES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

CAPACITANCE MANOMETER; KNUDSEN CELLS; NANOCRYSTALLINE SILICON QUANTUM DOTS; PLASMA CELL; PULSED PLASMA PROCESS; QUARTZ CRYSTAL SENSOR;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033747482     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-571-43     Document Type: Article

References (13)

1. K. K. Likharev, IBM J. Res. & Dev. 32, 144 (1988).
2. M. A. Kastner, Rev. Modern Physics 64, 849 (1992).
3. E. H. Visscher, J. Lindeman, S. M. Verbrugh, P. Hadley, J. E. Mooij and W. van der Vleuten, Appl. Phys. Lett. 68, 2014 (1996).
4. K. Matsumoto, M. Ishii and K. Segawa, J. Vac. Sci. Technol. B14, 1331 (1996).
5. K. Yano, T. Ishii, T. Hashimono, T. Kobayashi, F. Murai and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
6. Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase and K. Murase, IEEE Trans. Electron Devices 43, 1213 (1996).
7. M. Otobe and S. Oda, in Amorphous Silicon Technology-1995, edited by M. Hack, E. A. Schiff, A. Madan, M. Powel and A. Matsuda (Mater. Res. Soc. Proc. 377,San Francisco, CA, 1995) pp. 51-56.
8. M. Otobe, T. Kanai, T. Ifuku, H. Yajima and S. Oda, J. Non-Crystalline Solids 198-200, 875 (1996).
9. A. Itoh, T. Ifuku, M. Otobe and S. Oda, in Advances in Microcrystalline and Nanocrystalline Semiconductors, edited by R. W. Collins, P. M. Fauchet, I. Shimizu, J. C. Viel, T. Shimada, and A. P. Alivisatos, (Mater. Res. Soc. Proc. 452, Boston, MA, 1996) pp. 749-754.
10. M. Shiratani, S. Matsuo and Y. Watanabe, Jpn. J. Appl. Phys. 30, 1887 (1991).
11. Y. Watanabe and M. Shiratani, Plasma Source Sci. Technol. 3, 286 (1994).
12. A. Kono, N. Koike, K. Okuda and T. Goto, Jpn. J. Appl. Phys. 32, L543 (1993).
13. M. Volmer and A. Weber, Z. Phys. Chem. 119, 277 (1926).