Fabrication of very smooth walls and bottoms of silicon microchannels for heat dissipation of semiconductor devices

Microelectronics Journal

Volumn 31, Issue 6, 2000, Pages 405-410

  Dwivedi, V K ^a   Gopal, R ^a   Ahmad, S ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COOLING; CRYSTAL ORIENTATION; ETCHING; HEAT LOSSES; MICROMACHINING; SILICON WAFERS;

SILICON MICROCHANNELS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033738146     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00015-X     Document Type: Article

References (24)

1. R.K. Watts, W. Fichtner, E.N. Fuls, L.R. Thibault, R.L. Johnston, Electron beam lithography for small MOSFETs, IEDM Technical Digest, 1980, pp. 772-775.
2. Anacker W. Liquid cooling of integrated circuit chips. IBM Tech. Disclosure Bull. 20:1978;3742-3743.
3. Logic Packaging in the IBM 3081, Electronic News 17, November 1980, p. 47.
4. Tuckerman D.B., Pease R.F.W. High-performance heat sinking for VLSI. IEEE Electron. Device Lett. EDL-2:1981;126-129.
5. Endriz J.G., Vakili M., Browder G.S., DeVito M., Haden J.M., Harnagel G.L., Plano W.E., Sakamoto M., Welch D.F., Willing S., Worland D.P., Yao H.C. High power diode laser arrays. IEEE J. Quantum Electron. 28:1992;4952-4956.
6. Beach R., Benett W.J., Freitas B.L., Mundinger D., Comaskey B.J., Solarz R.W., Emanuel M.A. Modular microchannel cooled heat-sink for high average power laser diode arrays. IEEE J. Quantum Electron. 28:1992;4966-4976.
7. Holmes P.J. The Electrochemistry of Semiconductors. 1962;329 Academic Press, London.
8. Finne R.M., Klein D.L. A water-amine-complexing agent system for etching silicon. J. Electrochem. Soc. 114:(9):1967;965-970.
9. Lee D.B. Anisotropic etching of silicon. J. Appl. Phys. 40:(11):1969;4569-4574.
10. Ammar E.S., Rodgers T.J. UMOS Transistors on (110) Silicon. IEEE Trans. Electron. Devices. ED-27:(5):1980;907-914.
11. Bean K.E. Anisotropic Etching of Silicon. IEEE Trans. Electron. Devices. ED-25:(10):1978;1185-1193.
12. Bassous E. Fabrication of novel three-dimensional microstructures by the anisotropic etching of (100) and (110) silicon. IEEE Trans. Electron. Devices. ED-25:(10):1978;1178-1185.
13. Petersen K.E. Dynamic micromechanics on silicon: techniques and devices. IEEE Trans. Electron. Devices. ED-25:(10):1978;1241-1250.
14. Petersen K.E. Silicon as a mechanical material. Proc. IEEE. 70:(5):1982;420-457.
15. Seidel H., Csepregi L. Three-dimensional structures of silicon for sensor applications. Sensors Actuators. 4:(3):1983;455-463.
16. Seidel H., Csepregi L., Heuberger A., Baumgärtel H. Anisotropic etching of crystalline silicon in alkaline solutions. J. Electrochem. Soc. 137:(11):1990;3612-3632.
17. Crishal J.M., Harrington A.L. Selective etch for elemental silicon. J. Electrochem. Soc. 109:(202):1962;89.
18. Accro M.C., Esteve J., Burrer Chr., Götz A. Electrochemical etch-stop characteristics of TMAH:IPA solutions. Sensors Actuators. A46-47:1995;22-26.
19. Tabata O. pH-controlled TMAH etchants for silicon micromachining. Sensors Actuators A. 53:1996;335-339.
20. H.R. Huff, R.R. Burgess, J.B. Price, Semiconductor Silicon, The Electrochemical Society Softbound Proceedings Series, The Electronical Society Inc., Princeton, NJ, 1973, p. 339.
21. Yao S., Hesketh P.J., Macrander A.T. Etching high aspect ratio (110) silicon grooves in CsOH. J. Electrochem. Soc. 142:(2):1995;L23-L25.
22. Hölke A., Henderson H.T. Ultra-deep anisotropic etching of (110) silicon. J. Micromech. Microengng. 9:1999;51-57.
23. Ensell G. Alignment of mask patterns to crystal orientation. Sensors Actuators A. 53:1996;345-348.
24. Raley N.F., Sugiyama Y., Duzer T.V. Silicon etch-rate dependence on boron concentration in ethylenediamine-pyrocatechol-water solutions. J. Electrochem. Soc. 131:1984;161.