Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 304-309

  Esmark, K ^a   Furbock C ^b   Gossner, H ^a   Groos, G ^a   Litzenberger, M ^b   Pogany, D ^b   Zelsacher, R ^c   Stecher, M ^a   Gornik, E ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTROSTATICS; INTERFEROMETRY; LASER APPLICATIONS; POWER ELECTRONICS; STRESSES; TEMPERATURE DISTRIBUTION;

ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICES; ELECTROTHERMAL SIMULATION; LASER INTERFEROMETRY;

BIPOLAR TRANSISTORS;

EID: 0033733818     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843931     Document Type: Article

References (22)

1. A. Amerasekera C. Duvvury ESD in Silicon Integrated Circuits 1995 J. Wiley & Sons
2. A. Amerasekera W. van den Abeelen L. van Roozendaal M. Hannemann P. Schofield ESD failure modes: characteristics, mechanisms and process influences IEEE Trans. Electron Dev. 39 430 435 1992
3. C. Duvvury A. Amerasekera State-of-the-art issues for technology and circuit design of ESD protection in CMOS ICs Semicond. Sci. Technol. 11 833 850 1996
4. A. Amerasekera J. Verwey ESD in integrated circuits Quality Rel. Eng. Inter 8 259 272 1992
5. G. Krieger Thermal response of integrated circuit input devices to an electrostatic energy pulse IEEE Trans. Electron Dev. ED-34 877 882 1987
6. C. Russ J. Kreisbeck H. Gieser X. Guggenmos W. Kanert Electrothermal device simulation of a gg-nMOSt under HBM ESD conditions Proc. ESREF#95 141 146 Proc. ESREF#95 Bordeaux 1995
7. A. Amerasekera J. A. Seitchik Electrothermal behaviour of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions IEDM Tech. Dig. 455 458 IEDM Tech. Dig. 1994
8. C. H. Diaz C. Duvvury S.-M. Kang Electrothermal simulation of electrical overstress in advanced nMOS ESD I/O protection devices IEDM'93 Tech. Dig. 899 902 IEDM'93 Tech. Dig. 1993
9. A. D. Stricker S. Mettler H. Wolf M. Mergens W. Wilkening H. Gieser W. Fichtner Characterization and optimization of a bipolar ESD-device by measurements and simulations Proc. EOS/ESD Symp. 1998 290 300 Proc. EOS/ESD Symp. 1998 Reno USA 1998
10. M. Mergens W. Wilkening S. Mettler H. Wolf A. Stricker W. Fichtner Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions Proc. EOS/ESD Symp. 1999 1 10 Proc. EOS/ESD Symp. 1999 Orlando USA 1999
11. A. Schenk Re-examination of physical models in the temperature range 300K-700K 99/01 ETH Zürich
12. C. Fürböck N. Seliger D. Pogany M. Litzenberger E. Gornik M. Stecher H. Gossner W. Werner Backside Laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices IEDM Tech. Dig. 691 694 IEDM Tech. Dig. San Francisco 1998
13. C. Fürböck D. Pogany M. Litzenberger E. Gornik N. Seliger H. Gossner T. Müller-Lynch M. Stecher W. Werner Interferometric thermal mapping during ESD stress and failure analysis of smart power technology ESD protection devices Proc. EOS/ESD Symp. 1999 241 250 Proc. EOS/ESD Symp. 1999 Orlando USA 1999
14. C. Russ K. Bock M. Rasras I. De Wolf G. Groeseneken H. E. Maes Non-uniform triggering of gg_nMOSt investigated by combined emission microscopy and transmission line pulsing Proc. EOS/ESD Symp. 1998 177 186 Proc. EOS/ESD Symp. 1998 Reno USA 1998
15. G. L. Teh W. K. Chim Y. K. Swee Y. K. Co Spectroscopic photon emission measurements of n-channel MOSFETs biased into snapback breakdown using a continuous-pulsing transmission line technique Semicond. Sci. Technol. 12 662 671 1992
16. G. Breglio S. Pica P. Spirito A. Tartaglia Experimental detection of time dependent temperature maps in power bipolar transistors Therminic'97 127 132 Therminic'97 Cannes France 1997
17. H. Gossner T. Müller-Lynch K. Esmark M. Stecher Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology Proc. EOS/ESD Symp. 1999 19 27 Proc. EOS/ESD Symp. 1999 Orlando USA 1999
18. ISE TCAD Manuals 1998 Switzerland ISE Integrated Systems Engineering AG
19. 2-Dimensional Device Simulation Program 1992 California, Palo Alto Technology Modeling Associates Inc.
20. M. Goldstein G. Sölkner E. Gornik Heterodyne interferometer for the detection of electric and thermal signals in integrated signals through the substrate Rev. Sci. Instr. 64 3009 3013 1995
21. M. Bertolotti V. Bogdanov A. Ferrari A. Jascow N. Nazorova A. Pikhtin L. Schirone Temperature dependence of the refractive index in semiconductors J. Opt. Soc. Am. B 7 918 922 1990
22. H. W. Icenogle B. C. Platt W. L. Wolfe Refractive indexes and temperature coefficients of germanium and silicon Applied Optics 15 2348 2351 1976