Frequency multiplier measurements on heterostructure barrier varactors on a copper substrate

IEEE Electron Device Letters

Volumn 21, Issue 5, 2000, Pages 206-208

  Dillner, Lars ^a   Strupinski, Wlodek ^b   Hollung, Stein ^a   Mann, Chris ^c   Stake, Jan ^c   Beardsley, Matthew ^c   Kollberg, Erik ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COPPER; ELECTRIC CONDUCTIVITY OF SOLIDS; FREQUENCY MULTIPLYING CIRCUITS; HETEROJUNCTIONS; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

FLANGE TO FLANGE EFFICIENCY; HETEROSTRUCTURE BARRIER VARACTORS; REACTIVE ION BEAM ETCHING;

VARACTORS;

EID: 0033730815     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.841297     Document Type: Article

References (10)

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