5-mW and 5% Efficiency 216-GHz InP-Based Heterostructure Barrier Varactor Tripler

IEEE Microwave and Guided Wave Letters

Volumn 8, Issue 11, 1998, Pages 384-386

  Melique X ^a   Mann, C ^b   Mounaix, P ^a   Thornton, J ^b,c   Vanbesien O ^a   Mollot, F ^a   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

HBV's; InP based materials; Varactor tripler

Indexed keywords

ELECTRIC POTENTIAL; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; VARACTORS;

VARACTOR TRIPLERS;

FREQUENCY MULTIPLYING CIRCUITS;

EID: 0032207955     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.736253     Document Type: Article

References (12)

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