Reproducible large-area microfabrication of sub-100 nm apertures on hollow tips

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1970-1972

  Mihalcea, C ^a   Vollkopf, A ^a   Oesterschulze, E ^a  

^a UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; LOW TEMPERATURE PROPERTIES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

HOLLOW SILICON DIOXIDE TIPS; INHOMOGENEOUS THICKNESS DISTRIBUTION; MICROFABRICATION PROCESS;

SEMICONDUCTING SILICON;

EID: 0033729074     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393468     Document Type: Article

References (9)

1. E. Oesterschulze, O. Rudow, C. Mihalcea, W. Scholz, and S. Werner, Ultramicroscopy, 71, 85 (1998).
2. P. K. Hansma, O. Marti, S. A. C. Gould, B. Drake, and C. B. Prater, Science, 243, 641 (1989).
3. K. Luo, Z. Shi, and A. Majumdar, Appl. Phys. Lett., 68, 325 (1996).
4. B. E. Deal and A. S. Grove, J. Appl. Phys., 36, 3770 (1965).
5. R. B. Marcus and T. T. Sheng, J. Electrochem. Soc., 129, 1278 (1982).
6. D. H. Kao, J. P. McVittie, W. D. Nix, and C. S. Krishna, IEEE Trans. Electron. Devices, 34, 1008 (1987).
7. R. B. Marcus, T. S. Ravi, and T. Gmitter, Appl. Phys. Lett., 56, 236 (1989).
8. S. Werner, O. Rudow, C. Mihalcea, and E. Oesterschulze, Appl. Phys. A, 66, 367 (1998).
9. D. H. Kao, J. P. McVittie, W. D. Nix, and C. S. Krishna, IEEE Trans. Electron. Devices, 35, 25 (1988).