Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: experimental data. II. Morphology and composition as a function of deposition parameters

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1854-1858

  Soman, R ^a   Reisman, A ^a   Temple, D ^a,b   Alberti, R ^b   Pace, C ^b,c  

^a North Carolina State University   (United States)

^b MCNC   (United States)

^c The University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; MORPHOLOGY; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS; THERMODYNAMICS; THIN FILMS;

ALTERNATING CYCLIC METHOD; FILM COMPOSITION; SELECTIVE AREA CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0033729072     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393446     Document Type: Article

References (33)

1. R. F. Zavrel Jr., RF Design, 2043 (June 1997).
2. W. C. Holton, Solid State Technol., 119 (1987).
3. M. Case, Microwave Journal, 264 (May 1997).
4. J. D. Cressler, IEEE Spectrum, 49 (March 1995).
5. S. S. Iyer, G. L. Payton, J. M. C. Stork, B. S. Meyerson, and D. L. Harame, IEEE Trans. Electron Devices, 36, 2043 (1989).
6. C. A. King, J. L. Hoyt, and J. F. Gibbons, IEEE Trans. Electron Devices, 36, 2093 (1989).
7. G. L. Patton, J. M. C. Stork, J. H. Comfort, E. F. Crabbe, B. S. Meyerson, and D. L. Harame, Techn. Dig. Int. Electron Devices Meet., 13 (1990).
8. J. H. Comfort, G. L. Patton, J. D. Cressler, W. Lee, E. F. Crabbe, B. S. Meyerson, J. Y.-C. Sun, J. M. C. Stork, P.-F. Lu, J. N. Burghartz, J. Warnock, G. Scilla, K.-Y. Toh, M. D'Agostino, C. Stanis, and K. Jenkins, Tech. Dig. Int. Electron Devices Meet., 21 (1990).
9. J. Y. C. Sun, J. M. C. Stork, P. F. Lu, J. N. Burghartz, J. Warnock, G. Scilla, K. Y. Toh, M. D'Agostino, C. Stanis, and K. Jenkins, Tech. Dig. Int. Electron Devices Meet., 21 (1990).
10. M. Hong, E. Fresart, J. Steele, A. Zlotnicka, C. Stein, G. Tam, M. Racanelli, L. Knoch, Y. C. See, and K. Evans, IKEE Electron Device Lett., 14, 450 (1993).
11. C. Kermarree, T. Tewksbury, G. Dawe, R. Baines, B. Meyerson, D. Harame, and M. Gilbert, in Proceedings of Bipolar/BiCMOS Circuits and Technology Meeting, IEEE Electron Devices Society, p. 155, Minneapolis, MN (1994).
12. D. L. Harame, K. Schonenberg, M. Gilbert, D. Nyuyen-Ngoc, J. Malinowski, S. J. Jeng, B. Meyerson, J. D. Cressler, R. Groves, G. Berg, K. Tallman, K. Stein, G. Hueekel, C. Kermarree, T. Tice, G. Fitzgibbons, K. Walter, D. Covalito, T. Houghton, N. Greco, T. Kebede, B. Cunningham, S. Subhana, J. H. Comfort, and E. F. Crabbe, Tech. Dig. Int. Electron Devices Meet., 437 (1994).
13. A. Pruijmboom, C. E. Timmering, and J. J. E. M. Hageraats, Tech. Dig. Int. Electron Devices Meet., 825 (1994).
14. F. Sato, T. Hashimoto, T. Tatsumi, M. Soda, H. Tezuka, T. Suzaki, and T. Tashiro, Tech. Dig. Int. Electron Devices Meet., 82 (1995).
15. A. Pruijmboom, D. Terpstra, C. E. Timmering, W. B. de Boer, M. J. J. Theunissen, J. W. Slotboom, R. J. E. Hueting, and J. J. E. M. Hageraats, Tech. Dig. Int. Electron Devices Meet., 747 (1995).
16. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y. C. Sun, B. S. Meyerson, and T. Tice, IEEE Trans. Electron Devices, 42, 455 (1995).
17. D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y. C. Sun, B. S. Meyerson, and T. Tice, IEEE Trans. Electron Devices, 42, 469 (1995).
18. V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwani, J. M. Aitken, S. S. Iyer, and J. A. Ott, Tech. Dig. Int. Electron Devices Meet., 25 (1991).
19. W. C. Lee, B. Watson, T. J. King, and C. Hu, IEEE Electron Device Lett., 20, 232 (1999).
20. Y. S. Chieh, J. P. Krusius, D. Green, and M. Öztürk, IEEE Electron Device Lett., 17, 360 (1996).
21. S. C. Jain, Germanium-Silicon Strained Layers and Heterostructures, Academic Press, Inc., New York (1994).
22. J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara, and I. K. Robinson, J. Vac. Sci. Technol., A2, 436 (1984).
23. J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory, and R. T. Lynch, Appl. Phys. Lett., 44, 102 (1984).
24. Q. S. Wang, A. Reisman, and D. Temple, J. Electrochem. Soc., 142, 2438 (1995).
25. R. Soman, A. Reisman, D. Temple, and R. Alberti, J. Electrochem. Soc., 147, 1847 (2000).
26. D. L. Simpson, Ph.D. Thesis, North Carolina University, Raleigh, NC (1999).
27. R. Soman, A. Reisman, and D. Temple, J. Electrochem. Soc., 146, 3817 (1999).
28. R. Soman, A. Reisman, and D. Temple, J. Electrochem. Soc., Submitted.
29. J. Phys. Chem. Ref. Data. 14, Suppl. 1 (1985).
30. I. Barin, Thermochemical Data of Pure Substances, VCH, New York (1989).
31. C. F. Wan and K. E. Spear, in Chemical Vapor Deposition, L. F. Donaghay, P. R. Choudhury, and R. N. Tauber, Editors, PV 77-5, p. 47, The Electrochemical Society Proceedings Series, Princeton, NJ (1977).
32. N. V. Hai, K. Hein, and B. Möller, Neue Heutte, 16, 465 (1971).
33. A. Müller, R. Kebabeioglu, B. Krebs, and O. Glemser, Z. Phys. Chem., 240, 92 (1969).