MOS model 9 based non-quasi-static small-signal model for rf circuit design

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 652-655

  Tiemeijer, L F ^a   Scholten, A J ^a   De Vreede, P W H ^a   Klaassen, D B M ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SCATTERING PARAMETERS;

NON QUASI STATIC; NON-QUASI-STATIC EFFECT; PARAMETER SET; RF CIRCUIT DESIGN; S-PARAMETER MEASUREMENTS; SMALL SIGNAL MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84907895113     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. H.S. Momose et aI., IEDM 1996, pp. 105-108.
2. MOS Model 9, see: http://www.semiconductors.philips.com/Philips-Models
3. RRJ. Vanoppen et aI., IEDM 1994, pp. 173-177.
4. RRJ. Vanoppen et aI., IEDM 1997, pp. 317-321.
5. L.F. Tiemeijer et aI., ESSDERC 1998, pp. 480-483.
6. A.J. Scholten et aI., ICMTS 1998, pp. 77-82.
7. J.P. Raskin et aI., EMWC 1998, pp. 727-732.
8. Y. P. Tsividis, "Operation and Modeling of the MOS Transistor", McGraw-Hill, 1987.
9. T. Smedes et aI., Solid-State Electronics, Vo1.38, No.1, pp. 121-130, 1995.
10. M.A.C. Koolen et aI., BCTM 1991, pp. 188-191.
11. W. Liu et ai, JEDM 1997, pp. 309-312.