(100) Si/SiO2 interface states above midgap induced by Fowler-Nordheim tunneling electron injection

Journal of Applied Physics

Volumn 80, Issue 11, 1996, Pages 6315-6321

  Inoue, Masao ^a   Shirafuji, Junji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043081215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363709     Document Type: Article

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