Two types of traps at the Si/SiO2 interface characterized by their cross sections

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 159-162

  Albohn, J ^a   Fussel W ^a   Sinh, Ngo Duong ^a,b   Kliefoth, K ^a   Flietner, H ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING SILICON; SILICA;

MODULATION CAPACITANCE VOLTAGE METHODS;

SEMICONDUCTOR JUNCTIONS;

EID: 0033190246     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00361-5     Document Type: Article

References (8)

1. A. Aberle, S.Glunz, and W. Warta J. Appl. Phys. 71 (1992) 4422.
2. th ICFSI, eds. B. Lengeler, H. Lüth, W. Mönch, J. Pollmann, World Scintific, Singapore, 1993.
3. E.H. Nicollian and J.R. Brews, MOS Physics and Technology, J. Wiley & Sons, New York, 1982.
4. H. Flietner, Mat. Science Forum 185-188 (1995) 73.
5. N.N. Abakumov, V.I.Perel, and I.N. Yassievich, Sov. Phys. Semiconductors 12 (1978) 1.
6. P. M. Lenahan and P. V. Dressendörfer, J. Appl. Phys. 55 (1984) 3495.
7. J. H. Stathis and E. Cartier, Phys. Rev. Lett. 72 (1994) 2745.
8. W. Füssel, M. Schmidt, and H. Flietner, Nucl. Instr. and Methods in Phys. Research B 65 (1992) 238.