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Volumn 108, Issue 1, 1997, Pages 187-196

Attempts to correlate hydrogen plasma-induced and Si 3 N 4 /GaAs interface-related surface states: A charge deep-level transient spectroscopy study

(2) Thurzo, I a Ivanco J a

a INSTITUTE OF PHYSICS (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); MIS DEVICES; PASSIVATION; PLASMA APPLICATIONS; SILICON NITRIDE; SUBSTRATES; SURFACE STRUCTURE; SURFACE TREATMENT;

HYDROGEN PLASMA; INTERFACE RELATED SURFACE STATES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030869824 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00591-0 Document Type: Article

Times cited : (7)

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