Influence of DX centers on the performance of unipolar semiconductor lasers based on GaAs-AlxGa1-xAs

IEEE Photonics Technology Letters

Volumn 11, Issue 9, 1999, Pages 1090-1092

  Sirtori, Carlo ^a   Barbieri, Stefano ^a   Kruck, Peter ^a   Piazza, Vincenzo ^b   Beck, Mattias ^c   Faist, Jérôme ^c   Oesterle, Ursula ^d   Collot, Philippe ^a   Nagle, Julien ^a  

^a THALES   (France)

^b SCUOLA NORMALE SUPERIORE   (Italy)

^c Universite de Neuchatel Institut de Physique   (Switzerland)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON ENERGY LEVELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

THRESHOLD CURRENT DENSITY; UNIPOLAR SEMICONDUCTOR LASERS;

SEMICONDUCTOR LASERS;

EID: 0032595744     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.784160     Document Type: Article

References (11)

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