In-plane and perpendicular tunneling through InAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 7, Issue 3, 2000, Pages 425-429

  Schmidt, K H ^a   Versen, M ^a   Bock, C ^a   Kunze, U ^a   Reuter, D ^a   Wieck, A D ^a  

^a RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRON RESONANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FERMI LEVEL; HIGH ELECTRON MOBILITY TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; COULOMB BLOCKADES; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033726264     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(99)00354-9     Document Type: Article

References (16)

1. Leonard D., Pond K., Petroff P.M. Phys. Rev. B. 50:1994;11 687.
2. Xie Q., Madhukar A., Chen P., Kobayashi N.P. Phys. Rev. Lett. 75:1995;2542.
3. Fafard S., Wasilewski Z.R., Allen C.N., Picard D., Piva P.G., McCaffrey J.P. Superlatt. Microstruct. 25:1999;87.
4. Schmidt K.H., Medeiros-Ribeiro G., Garcia J., Petroff P.M. Appl. Phys. Lett. 70:1997;1727.
5. Warburton R.J., Dürr C.S., Karrai K., Kotthaus J.P., Medeiros-Ribeiro G., Petroff P.M. Phys. Rev. Lett. 79:1997;5282.
6. Drexler H., Leonard D., Hansen W., Kotthaus J.P., Petroff P.M. Phys. Rev. Lett. 73:1994;2252.
7. Fricke M., Lorke A., Kotthaus J.P., Medeiros-Ribeiro G., Petroff P.M. Europhys. Lett. 36:1994;196.
8. Miller B.T., Hansen W., Manus S., Luyken R.J., Lorke A., Kotthaus J.P. Phys. Rev. B. 56:1997;6764.
9. Horiguchi N., Futatsugi T., Nakata Y., Yokoyama N. Jpn. J. Appl. Phys. 36:1997;L1246.
10. Yoh K., Konda J., Shiina S., Nishiguchi N. Jap. J. Appl. Phys. 36:1997;4134.
11. Phillips J., Kamath K., Brock T., Bhattacharya P. Appl. Phys. Lett. 72:1998;3509.
12. Horiguchi N., Futatsugi T., Nakata Y., Yokoyama N. Appl. Phys. Lett. 70:1997;2294.
13. Ghisoni M., Sjölund O., Larsson A. Appl. Phys. Lett. 69:1996;1773.
14. Narihiro M., Yusa G., Nakamura Y., Noda T., Sakaki H. Appl. Phys. Lett. 70:1997;105.
15. Thornton A.S.G., Ihn T., Main P.C., Eaves L., Henini M. Appl. Phys. Lett. 73:1998;354.
16. Klehn B., Kunze U. J. Appl. Phys. 85:1999;3897.