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Journal of Physics and Chemistry of Solids

Volumn 32, Issue 4, 1971, Pages 847-855

The effect of annealing procedures on photoluminescence and electroluminescence in ZnTe

(2) Kennedy, D I a Russ, M J a

a Bowmar Canada Limited ^* (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004674304 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3697(71)90048-5 Document Type: Article

Times cited : (16)

References (14)

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7
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- Benjamin, New York
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8
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- Improved method for growing II-VI crystals from the vapor phase
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- De Meiss¹ Fischer²

11
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- Piper¹ Polich²

12
- 0014566087
- PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION
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- Merz¹ Feldman²

13
- 84987126558
- Photoluminescence Spectra of ZnTe with Anomalous Temperature Dependence
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- Watanabe¹ Usui²

14
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- Mobility of Holes and Interaction between Acceptor Defects in ZnTe
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- Aven¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.