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Volumn 128-129, Issue 1, 2000, Pages 240-244

Metal plasma source ion implantation using a UBM cathode

Author keywords

Depth profile; MePSII; Recoil implantation; UBM cathode

Indexed keywords

COPPER; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; METALLIC FILMS; PLASMA SOURCES; SPUTTER DEPOSITION; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0033723135     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00577-6     Document Type: Article
Times cited : (17)

References (18)
  • 2
    • 0347135969 scopus 로고    scopus 로고
    • Method and Apparatus for Plasma Source Ion Implantation, US Patent 4764395, 1988
    • J.R. Conrad, Method and Apparatus for Plasma Source Ion Implantation, US Patent 4764395, 1988.
    • Conrad, J.R.1
  • 3
    • 0032194613 scopus 로고    scopus 로고
    • Tribological behavior of aluminum alloys surface layer implanted with nitrogen ions by plasma immersion ion implantation
    • Z. Zhan, X. Ma, L. Feng, Y. Sun, L Xia, Tribological behavior of aluminum alloys surface layer implanted with nitrogen ions by plasma immersion ion implantation, Wear 220 (1998) 161.
    • (1998) Wear , vol.220 , pp. 161
    • Zhan, Z.1    Ma, X.2    Feng, L.3    Sun, Y.4    Xia, L.5
  • 4
    • 0347135966 scopus 로고    scopus 로고
    • Fourth International Workshop on Plasma-based Ion Implantation, 2-4 June 1998, Dearborn, Michigan, USA, in press
    • J. Hongbing, X. Lifang, M. Xinxin, S. Yue, S. Mingren. Fourth International Workshop on Plasma-based Ion Implantation, 2-4 June 1998, Dearborn, Michigan, USA, J. Vac. Sci. Technol. B, 1999 (in press).
    • (1999) J. Vac. Sci. Technol. B
    • Hongbing, J.1    Lifang, X.2    Xinxin, M.3    Yue, S.4    Mingren, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.