SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 402-404, Issue , 1998, Pages 623-627

Ga-rich GaP(001)(2 × 4) surface structure studied by low-energy ion scattering spectroscopy

(6) Naitoh, M a Konishi, A a Inenaga, H a Nishigaki, S a Oishi, N b Shoji, F c

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

b KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

c KYUSHU KYORITSU UNIVERSITY (Japan)

Author keywords

Computer simulations; Gallium phosphide; Low energy ion scattering (LEIS); Low index single crystal surfaces; Semiconducting surfaces; Surface relaxation and reconstruction; Surface structure, morphology, roughness and topography

Indexed keywords

ANNEALING; COMPUTER SIMULATION; ION BOMBARDMENT; MORPHOLOGY; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; SURFACE STRUCTURE;

LOW ENERGY ION SCATTERING (LEIS) SPECTROSCOPY; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031645288 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00902-3 Document Type: Article

Times cited : (10)

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