Monte Carlo simulation of electromigration in polycrystalline metal stripes

Semiconductor Science and Technology

Volumn 15, Issue 6, 2000, Pages 608-612

  Di Pascoli, S ^a   Iannaccone, G ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTROMIGRATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MONTE CARLO METHODS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

CURRENT DENSITY REDISTRIBUTION; FAILURE PROBABILITY; METAL STRIPES; VORONOI TESSELATION;

METALS;

EID: 0033715594     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/6/321     Document Type: Article

References (11)

1. Scorzoni A, Neri B, Caprile C and Fantini F 1991 Mater. Sci. Rep. 7 143-220. This review contains several references to experimental work on the subject.
2. Neri B, Diligenti A and Bagnoli P E 1987 IEEE Trans. Electron Devices 34 2317-22
3. Diligenti A, Neri B, Nannini A and Ciucci S 1991 J. Electron. Mater. 20 559-65
4. Marcoux P J, Merchant P P, Naroditsky V and Rehder W D 1989 Hewlett-Packard J. 40 79-84
5. Wu K and Bradley R M 1994 Phys. Rev. B 50 12 468-87
6. Ciofi C and Di Pascoli S 1997 Microelectron. Reliab. 37 77-85
7. Gungor R and Maroudas D 1998 Appl. Phys. Lett. 72 3452-4
8. Neri B, Ciofi C and Dattilo D 1997 IEEE Trans. Electron Devices 44 1454-9
9. Press W H, Teukolsky S A, Vetterling W T and Flannery B P 1992 Numerical Recipes in Fortran 77 (Cambridge: Cambridge University Press)
10. van der Ziel A 1986 Noise in Solid State Devices and Circuits (New York: Wiley)
11. Ciofi C, Dattilo V and Neri B 1999 Proc. IPFA99 (Singapore)